X-WD016NG V1.0Optocouplers

Description： 

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features： 

1) VDS=40V,ID=16A,RDS(ON)<16mΩ@VGS=10V（Typ：12mΩ） 

2) Low gate charge. 

3) Green device available. 

4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 

5) Excellent package for good heat dissipation. 

6) MSL3

X-WD016NG V1.0Optocouplers parameter list

• Power supply
• home appliance
• drone
• floor sweeper
• Medical device
• Multimedia audio power amplifier
• LED lighting
• Toy
• robot
• Instruments and meters
• industrial control
• Automotive Electronics

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